SMD Cross reference

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5512 References in database
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For convencional components please check Equivalents
SMD CODETypeSummaryCaseMarkingFig.Pinout
TL
Rhm

2SA2072
PNP silicon epitaxial planar transistor
1) High speed switching. ( tf : Typ. : 20ns at IC = -3A) 2) Low saturation voltage, typically. (Typ. : 200mV, at IC = -2.0A, IB = -200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise
SOT428 SOT428 - TLPinout 3
0
Hit

HVC300A

Varicap, Diode
SOD523 SOD523 - 0Pinout I
0
NEC

2SC3603

npn, RF, fT, 7GHz
SOT173 SOT173 - 0Pinout CX
5
Vishay Siliconix

SSTPAD5

PAD-5, 5pA, leakage, diode
- - - 5Pinout J
1
Mini Circuits

Gali-1

DC-8GHz, MMIC, amp, 12dB, gain
SOT89 SOT89 - 1Pinout AZ
10
Vishay Siliconix

SSTPAD10

PAD-10, 10pA, leakage, diode
- - - 10Pinout J
10
SGS THOMSON

SO918R

Si-npn
SOT23 SOT23 - 10Pinout -
11
SGS THOMSON

SO2369R

2N2369
SOT23 SOT23 - 11Pinout R
2
Philips

BST82

n-ch, mosfet, 80V, 175mA
- - - 2Pinout M
2
Motorola

MRF5711L
NPN Silicon High Frequency Transistor
RF - MRF571 High Gain Bandwidth Product fT = 8.0 GHz (Typ) @ 50 mA Low Noise Figure NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571) High Gain GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1) High Power Gain Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1)
SOT143 SOT143 - 2Pinout X


SMD Cross Reference, Type and Equivalent


* Top View for Fig. and Pinout.
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